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hexfet power mosfet notes through are on page 8 features and benefits applications 3.3mm x 3.3mm pqfn absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25 c continuous drain current, v gs @ 10v i d @ t a = 70 c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25 c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100 c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25 c power dissipation p d @ t c(bottom) = 25 c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.8 0.022 37 max. 20 40 160 20 30 16 40 v w a c ? synchronous mosfet for buck converters v ds 30 v r ds(on) max (@v gs = 10v) 4.3 m q g (typical) 13 nc r g (typical) 1.1 i d (@t c(bottom) = 25c) 40 a 3 2 1 8 7 6 5 4 d d d d s s s g

! features benefits low r dson ( . . 100 1.0 ? multi-vendor compatib ility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliab ility form quantity irfhm830dtrpbf pqfn 3.3mm x 3.3mm tape and reel 4000 irfhm830dtr2pbf pqfn 3.3mm x 3.3mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

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d s g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 3.4 r jc (top) junction-to-case ??? 37 c/w r ja junction-to-ambient ??? 46 r ja (<10s) junction-to-ambient ??? 31 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? . 0.0 . . . .1 1. 1. . 0 a .0 1 00 a ??? ??? 5 ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 69 ??? ??? s q g total gate charge ??? 27 ??? nc q g total gate charge ??? 13 20 q gs1 pre-vth gate-to-source charge ??? 2.9 ??? q gs2 post-vth gate-to-source charge ??? 1.8 ??? q gd gate-to-drain charge ??? 4.5 ??? q godr gate charge overdrive ??? 3.8 ??? see fig.17 & 18 q sw switch charge (q gs2 + q gd ) ??? 6.3 ??? q oss output charge ??? 10 ??? nc r g gate resistance ??? 1.1 ??? . 0 .1 . 1 1 avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 0.85 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 17 26 nc t on forward turn-on time time is dominated by parasitic inductance v gs = 4.5v, i d = 20a v gs = 4.5v typ. ??? r g =1.8 v ds = 15v, i d = 20a v ds = 24v, v gs = 0v, t j = 125c m i d = 20a v gs = 10v, v ds = 15v, i d = 20a t j = 25c, i f = 20a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 20a v gs = 0v v ds = 25v v ds = 15v ??? conditions v gs = 0v, i d = 1ma reference to 25c, i d = 4ma v gs = 10v, i d = 20a v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions see fig.15 max. 82 20 ? = 1.0mhz na ns pf nc a 40 ??? ??? 160 ??? ???

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 60 s pulse width tj = 25c 2.8v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.8v vgs top 10v 8.0v 4.5v 3.8v 3.5v 3.3v 3.0v bottom 2.8v 1.5 2 2.5 3 3.5 4 4.5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10203040 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v vds= 6v i d = 20a
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.10 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 10ma id = 5.0ma id = 2.0ma id = 1.0ma 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 i d , d r a i n c u r r e n t ( a ) limited by package
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.8a 11a bottom 20a

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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 3.3x3.3 outline part marking pqfn 3.3x3.3 outline package details international rectifier logo part number marking code (per marking spec) assembly site code (per scop 200-002) date code lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pin 1 identifier 1 2 3 4 5 6 7 8
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qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.409mh, r g = 50 , i as = 20a. pulse width 400 s; duty cycle 2%. rthjc is guaranteed by design. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 40a by production test capability pqfn 3.3x3.3 outline tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 326.0 20.2 12.8 1.5 17.8 12.4 code a b c d e f g max 330.25 20.45 13.50 2.5 18.3 12.9 min 12.835 0.795 0.504 0.059 0.701 0.488 max 13.002 0.805 0.531 0.098 0.720 0.508 metric imperial 102.0 ref 4.016 ref dimensions min 7.90 3.90 11.70 5.45 3.50 3.50 0.25 1.10 code a b c d e f g h max 8.10 4.10 12.30 5.55 3.70 3.70 0.35 1.30 min 0.311 0.154 0.461 0.215 0.138 0.138 0.010 0.043 max 0.319 0.161 0.484 0.219 0.146 0.146 0.014 0.051 metric imperial msl 1 (per jedec j-std-020d ??? ) rohs compliant moisture sensitivity level pqfn 3.3mm x 3.3mm yes qualification information ? qualification level industrial ?? (per jedec jesd47f ??? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? revision history 12/16/2013

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